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VCSEL: Gallium Arsenide (GaAs 50 – 100 µm)
Diameter: 50 mm
Wafer material: GaAs (Polyimide on top)
Thickness: 100 µm
Die pitch: 195 µm x 195 µm
Street width: 35 µm
Results
Dicing width : < 21 µm
Burr height : < 3 µm
UPH : 5.2