An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch.. It is used in switching power supplies in high power applications: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts, and air-conditioners.


The Metal Oxide Semiconductor Field Effect Transistor is fabricated by the controlled oxidation of Silicon. The voltage of the covered gate determines the electrical conductivity. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.

Sic & GaN

WBG (Wide Band Gap) materials SiC (silicon carbide) and GaN (Galium Nitride) offer higher efficiency, power density and can operate at higher switching frequencies and in harsh environments.

Transistors & Diodes

A device that blocks current in one direction while letting current flow in another direction is called a diode

A transistor is created by using three layers rather than the two layers used in a diode. You can create either an NPN or a PNP sandwich. A transistor can act as a switch or an amplifier.