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ALSI LASER1205
ALSI LASER1206
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NAND: 60 (50 Si + 10 DAF) µm
Wafer
Diameter: 300 mm
Wafer material: Si
Thickness: 60 (50 Si + 10 DAF) µm
Die pitch: 7909 µm x 7503 µm
Street width: 82 µm
Results and benefits
Kerf width: 10 µm
Dicing width: 18 to 30 (PI area) µm
Productivity: 3.5 wafers per hour