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MOSFET: Silicon ( <50μm)

  • Diameter: 200 mm
  • Wafer material: Silicon
  • Thickness: 45 µm + PI layer
  • Die pitch: 1640 µm x 1500 µm
  • Street width: 22 – 35 µm

Results

  • Process : Dicing-UV-ns # VI-Process
  • Dicing width: 22 µm
  • Burr height: 2 µm pUPH : 5
  • Die Strength : Front side: 587 / Back side: 629

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