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IGBT: Si (< 100 µm)

Wafer

  • Diameter: 200mm
  • Wafer material: Si
  • Thickness: 75 µm
  • Die pitch: 10557 µm x 10057 µm
  • Street width: 182 µm

Results and benefits

  • Dicing width: ≤ 22 µm
  • Burr height: < 3 µm
  • Productivity: 12.3

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