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IGBT: Si (< 100 µm)
Wafer
Diameter: 200mm
Wafer material: Si
Thickness: 75 µm
Die pitch: 10557 µm x 10057 µm
Street width: 182 µm
Results and benefits
Dicing width: ≤ 22 µm
Burr height: < 3 µm
Productivity: 12.3