GaN on Si (200μm >)

• Diameter: 150 mm
• Wafer material: GaN
• Thickness: 5 µm GaN + 215 µm Si
• Die pitch: 8268 µm x 4804 µm
• Street width: 60 µm

Results

• Process : Grooving-UV-ns # Matrix
• Grooving outer width : 60 µm
• Grooving inner width : 50 ~55 µm
• UPH : 4.5 (150mm wafer)
• UPH : 10 (300mm wafer)