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VCSEL: Gallium Arsenide (GaAs 50 – 100 µm)

  • Diameter: 50 mm
  • Wafer material: GaAs (Polyimide on top)
  • Thickness: 100 µm
  • Die pitch: 195 µm x 195 µm
  • Street width: 35 µm

Results

  • Dicing width : < 21 µm
  • Burr height : < 3 µm
  • UPH : 5.2

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