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  • Diameter: 200 mm
  • Wafer material: Si
  • Thickness: 70 µm Si + 20 µm air + 110 µm Si
  • Die pitch: 630 µm x 675 µm
  • Street width: 65 µm

Results

  • Process : Dicing-UV-ns # MB
  • Kerf Width : 9 µm
  • Dicing width: 21 µm
  • Burr height: < 10 µm
  • UPH : 1.2

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