• Diameter: 100 mm
  • Wafer material: SiC
  • Thickness: 180 µm
  • Die pitch: 2250 µm x 2950 µm
  • Street width: 80 µm

Results

  • Kerf width: 13 µm
  • Dicing width: 18 µm
  • Burr height: >3 µm
  • UPH : 2.9

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