• Diameter: 150 mm
  • Wafer material: SiC
  • Thickness: 190 µm SiC + 60 µm silver
  • Die pitch: 4490 µm x 4900 µm

Results

  • Process : Dicing-UV-ns # MB
  • Dicing width: 34 µm
  • Burr height:
  • UPH : 1.6

In order to be able to use all functions of this website,
either a login or a registration is necessary.

Login Register