Silicon Carbide (100μm – 150μm)

  • Diameter: 100 mm
  • Wafer material: SiC
  • Thickness: 110 µm
  • Die pitch: 920 µm x 4060 µm
  • Street width: 120 µm

Results

  • Process : Dicing-UV-ns # VI-Process
  • Dicing width: 22 µm
  • Burr height: < 3 µm
  • UPH : 3.9

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