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NAND: 60 (50 Si + 10 DAF) µm

Wafer

  • Diameter: 300 mm
  • Wafer material: Si
  • Thickness: 60 (50 Si + 10 DAF) µm
  • Die pitch: 7909 µm x 7503 µm
  • Street width: 82 µm

Results and benefits

  • Kerf width: 10 µm
  • Dicing width: 18 to 30 (PI area) µm
  • Productivity: 3.5 wafers per hour

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