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  • Diameter: 50 mm
  • Wafer material: InP
  • Top Layer : InGaAs : 5 ~6 µm
  • Thickness: 130 µm
  • Die pitch: 500 µm x 500 µm
  • Street width: 43 µm

Results

  • Dicing width : < 27 µm
  • Burr height : < 7 µm
  • UPH : 11

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