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GaN on SiC (50 – 100μm)

  • Diameter: 100 mm
  • Wafer material: GaAs (Polyimide on top)
  • Thickness: 2 µm GaN + 78 µm SiC
  • Die pitch: 645 µm x 250 µm
  • Street width: 60 µm

Results

  • Process : Dicing-UV-ns # MB
  • Dicing width : < 25 µm
  • Burr height : < 10 µm
  • UPH : 2.3

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