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GaN on Si (200μm >)

  • Diameter: 150 mm
  • Wafer material: GaN
  • Thickness: 5 µm GaN + 215 µm Si
  • Die pitch: 8268 µm x 4804 µm
  • Street width: 60 µm

Results

  • Process : Grooving-UV-ns # Matrix
  • Grooving outer width : 60 µm
  • Grooving inner width : 50 ~55 µm
  • UPH : 4.5 (150mm wafer)
  • UPH : 10 (300mm wafer)

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