Gallium Arsenide (GaAs 150 – 200 µm)

  • Diameter: 100 mm
  • Wafer material: GaAs
  • Thickness: 180 µm
  • Die pitch: 210 µm x 210 µm
  • Street width: 30 µm

Results

  • Dicing width : < 21 µm
  • Burr height : < 3 µm

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