Gallium Arsenide (GaAs 100 – 150 µm)

  • Diameter: 150 mm
  • Wafer material: GaAs
  • Thickness: 90 µm
  • Die pitch: 602 µm x 655 µm
  • Street width: 41 µm

Results

  • Dicing width: 17 µm
  • Burr height: ≈3 µm
  • Productivity: 3.3 wafers per hour

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