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  • Diameter: 150 mm
  • Wafer material: 10 µm SiO2/SiN/Al2O3 – 60 µm Si – 10 µm DAF
  • Thickness: 80 µm
  • Die pitch: 500 µm x 500 µm
  • Street width: 70 µm

Results

  • Process : Dicing-UV-ns # V-Process
  • Dicing width: 23 µm
  • Burr height: 5 µm
  • UPH : 1.7

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